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Ogawa, Shuichi*; Takakuwa, Yuji*; Ishizuka, Shinji*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke; Hachiue, Shunsuke
JAERI-Tech 2004-046, 25 Pages, 2004/06
JAERI-Tech-2004-046.pdf:2.51MB
We investigated the correlation between initial sticking coefficient and O
transitional kinetic energy to understand O adsorption processes on the Ti(0001) surface via photoemission spectroscopy for O-1s and Ti-2p core levels using the surface reaction analysis apparatus, installed at the JAERI soft X-ray beamline BL23SU in the SPring-8. We observed the decrease of initial sticking coefficient of O molecules on the Ti(0001) surface with increasing O transitional kinetic energy. We concluded that the O adsorption on the Ti(0001) surface proceeded by a trapping-mediated dissociative adsorption mechanism. The constant dependence of the initial sticking coefficient on incident angle of O beams also suggested the propriety of the trapping-mediated surface reaction mechanism.
at room temperatureYoshigoe, Akitaka; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(9A), p.5749 - 5750, 2003/09
Times Cited Count：2 Percentile：10.73(Physics, Applied)We investigated oxidation reactions induced by the translational kinetic energy of O on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si
species including the Si
, Si
and Si
species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.
Teraoka, Yuden; Yoshigoe, Akitaka
Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12
The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O translational kinetic energy of several eV, have been found in the O/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.
molecular beamsTeraoka, Yuden; Yoshigoe, Akitaka
Hyomen Kagaku, 23(9), p.553 - 561, 2002/09
no abstracts in English
molecular beamsTeraoka, Yuden; Yoshigoe, Akitaka
SPring-8 Research Frontiers 2000/2001, p.48 - 50, 2001/00
no abstracts in English
Song, X. M.*; Sugie, Tatsuo; Yoshino, Ryuji
Purazuma, Kaku Yugo Gakkai-Shi, 76(3), p.282 - 287, 2000/03
no abstracts in English
Al(210) surface at room temperature using supersonic oxygen molecular beam; Real-time photoemission spectroscopic study with synchrotron radiationSyu, Y.*; Sakurai, Junya*; Teraoka, Yuden; Yoshigoe, Akitaka; Demura, Masahiko*; Hirano, Toshiyuki*
no journal, ,
